Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N90VH-251
No reviews yet — be the first to review Jilin Sino-Microelectronics JCS4N90VH-251.
| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 5.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
900V 4A 4V 52W 5.5Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS