Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N65VB-IPAK
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| Gate Charge(Qg) | 16.3nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 117.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 2.4Ω@10V |
| Number | - |
| Input Capacitance(Ciss) | 900pF |
650V 4A 4V 117.9W 2.4Ω@10V TO-251 Single FETs, MOSFETs RoHS