Jilin Sino-Microelectronics JCS4N65RC-DPAK

Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N65RC-DPAK

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Specifications

Configuration-
Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation122W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)810pF

Technical details

N-Channel 650V 4A 122W Surface Mount DPAK

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