Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N65FB-220MF
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 16.3nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 51.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 900pF |
650V 4A 4V 51.7W 2.4Ω@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS