Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N65FB
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 4Ω@10V |
| Number | - |
| Input Capacitance(Ciss) | 642pF |
650V 4A 33W Through Hole TO-220MF