Jilin Sino-Microelectronics JCS4N60RC

Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N60RC

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation159.2W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)860pF

Technical details

600V 4A 159.2W Surface Mount DPAK

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