Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N60RB
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| Gate Charge(Qg) | 18.1nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 165.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
600V 4A 4V 165.56W 2.4Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS