Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS4N60CB-220C
No reviews yet — be the first to review Jilin Sino-Microelectronics JCS4N60CB-220C.
| Gate Charge(Qg) | 18.1nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 193.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
600V 4A 4V 193.2W 2.4Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS