Jilin Sino-Microelectronics · FETs & Power MOSFETs · MPN JCS2N60VB-IPAK
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| Gate Charge(Qg) | 11nC@480V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 43.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 4.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 560pF |
N-Channel 600V 2A 43.6W Through Hole TO-251