Jilin Sino-Microelectronics 3DD4243DM-126

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD4243DM-126

No reviews yet — be the first to review Jilin Sino-Microelectronics 3DD4243DM-126.

Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain22
Pd - Power Dissipation40W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 400V 2A 40W Through Hole TO-126

Related Transistors (BJTs)