Jilin Sino-Microelectronics 3DD4242DM-126

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD4242DM-126

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain22
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126

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