Jilin Sino-Microelectronics 3DD13009K-O-C-N-B

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD13009K-O-C-N-B

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain8
Pd - Power Dissipation100W
typeNPN
Current - Collector(Ic)12A
Operating Temperature-
Vce Saturation(VCE(sat))1.8V

Technical details

400V 8 NPN 12A TO-220 Single Bipolar Transistors RoHS

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