Jiangsu JieJie Microelectronics JMTQ55P02A

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTQ55P02A

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Specifications

Gate Charge(Qg)46nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation38W
RDS(on)12mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)459pF
Number1 P-Channel
Input Capacitance(Ciss)4.6nF
TypeP-Channel

Technical details

P-Channel 20V 55A 38W Surface Mount PDFN3.3x3.3-8L

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