Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTQ35N06A
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 18mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
N-Channel 60V 35A 41W Surface Mount PDFN3.3x3.3-8L