Jiangsu JieJie Microelectronics JMTQ170C04D

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTQ170C04D

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Specifications

Gate Charge(Qg)11nC@10V;20nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)86.2pF;107pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.6V
Pd - Power Dissipation7.3W
Reverse Transfer Capacitance (Crss@Vds)68.5pF;79.5pF
RDS(on)16mΩ@10V;38mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)980pF;1.034nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V 14A 7.3W Surface Mount DFN-8(3x3)

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