Jiangsu JieJie Microelectronics JMTP3010D

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTP3010D

No reviews yet — be the first to review Jiangsu JieJie Microelectronics JMTP3010D.

Specifications

Gate Charge(Qg)19nC
Drain to Source Voltage30V
Output Capacitance(Coss)142pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)119pF
Number2 N-Channel
Input Capacitance(Ciss)1.011nF
Vgs±20V

Technical details

N-Channel Array 30V 12A 3W Surface Mount SOP-8

Related FETs & Power MOSFETs