Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTP170N06D
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| Gate Charge(Qg) | 50nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.6W |
| RDS(on) | 28mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.9nF |
60V 9.2A 3.6W Surface Mount SOIC-8