Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTK2006A
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| Gate Charge(Qg) | 23nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 278pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 252pF |
| RDS(on) | 8.5mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.007nF |
20V 60A 37W Surface Mount TO-252-2