Jiangsu JieJie Microelectronics JMTG030P02A

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMTG030P02A

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Specifications

Gate Charge(Qg)100nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)1.6nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation33W
RDS(on)5.7mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)1.068nF
Number1 P-Channel
Input Capacitance(Ciss)15nF
TypeP-Channel

Technical details

P-Channel 20V 85A 33W Surface Mount PDFN5x6-8L

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