Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH1008AE-13
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 112A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 192W |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.92nF |
N-Channel 100V 112A 192W Surface Mount TO-263-3L