Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH1006AG-13
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 102A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 130W |
| RDS(on) | 5.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 11.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.369nF |
N-Channel 100V 102A 130W Surface Mount PDFN5x6-8L