Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH1004BGQ
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| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 138A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 176W |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.434nF |
100V 138A 2.7V 176W 3.3mΩ@10V 1 N-channel PDFN5x6-8L Single FETs, MOSFETs RoHS