Jiangsu JieJie Microelectronics JMSH1004AE

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH1004AE

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.361nF
Current - Continuous Drain(Id)190A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)8.5pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.398nF
TypeN-Channel

Technical details

N-Channel 100V 190A 250W Surface Mount TO-263-3

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