Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH0401AGQ-13
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2nF |
| Current - Continuous Drain(Id) | 197A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.015nF |
40V 197A 2.8V 136W 1.3mΩ@10V 1 N-channel PDFN5x6-8L Single FETs, MOSFETs RoHS