Jiangsu JieJie Microelectronics JMSH0401AGQ

Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMSH0401AGQ

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)197A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.015nF

Technical details

N-Channel 40V 197A 136W Surface Mount DFN-8(5x6)

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