Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMGY7V10A
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| Gate Charge(Qg) | 4.3nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 13.7W |
| RDS(on) | 140mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| Input Capacitance(Ciss) | 206pF |
| Type | N-Channel |
100V 7A 2.5V 13.7W 140mΩ@10V N-Channel SOT-223-4 Single FETs, MOSFETs RoHS