Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMGK088V10A
No reviews yet — be the first to review Jiangsu JieJie Microelectronics JMGK088V10A.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 39.4nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 127W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 12.7mΩ@4.5V |
| Input Capacitance(Ciss) | 2.046nF |
| Type | N-Channel |
100V 80A 2.5V 127W 12.7mΩ@4.5V N-Channel TO-252-2 Single FETs, MOSFETs RoHS