Jiangsu JieJie Microelectronics · FETs & Power MOSFETs · MPN JMGE120V09A
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 85V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 184W |
| RDS(on) | 5.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
N-Channel 85V 130A 184W Surface Mount TO-263