INNOTION YPA895TS

INNOTION · Transistors (BJTs) · MPN YPA895TS

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Specifications

Current - Collector Cutoff600nA
Transition frequency(fT)4GHz
Collector - Emitter Voltage VCEO14V
DC Current Gain55
Emitter-Base Voltage VEBO7.8V
Pd - Power Dissipation500mW
ConfigurationCommon Base
typeNPN
Number2 NPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+85℃
Vce Saturation(VCE(sat))5V

Technical details

14V 55 NPN 2 NPN 50mA DFN-6-EP(2x2) Single Bipolar Transistors RoHS

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