Infineon · FETs & Power MOSFETs · MPN SPW55N80C3
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| Gate Charge(Qg) | 288nC@10V |
|---|---|
| Drain to Source Voltage | 850V |
| Current - Continuous Drain(Id) | 54.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 277pF |
| RDS(on) | 85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.52nF |
N-Channel 850V 54.9A 500W Through Hole TO-247