Infineon SPW47N60C3

Infineon · FETs & Power MOSFETs · MPN SPW47N60C3

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Specifications

Gate Charge(Qg)252nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation415W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.8nF

Technical details

N-Channel 650V 47A 415W Through Hole TO-247AC-3

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