Infineon · FETs & Power MOSFETs · MPN SPW35N60C3
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| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 1.5nF |
| Current - Continuous Drain(Id) | 34.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 100mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 4.5nF |
600V 34.6A 3.9V 313W 100mΩ@10V TO-247AC-3 Single FETs, MOSFETs RoHS