Infineon · FETs & Power MOSFETs · MPN SPW21N50C3
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| Gate Charge(Qg) | 95nC@10V |
|---|---|
| Drain to Source Voltage | 560V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
| Type | N-Channel |
560V 21A 3.9V 208W 190mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS