Infineon SPW16N50C3

Infineon · FETs & Power MOSFETs · MPN SPW16N50C3

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)280mΩ
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

N-Channel 500V 16A 160W Through Hole TO-247

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