Infineon SPW12N50C3IN

Infineon · FETs & Power MOSFETs · MPN SPW12N50C3IN

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)11.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF

Technical details

500V 11.6A 3.9V 30W 380mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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