Infineon SPU04N60C3

Infineon · FETs & Power MOSFETs · MPN SPU04N60C3

No reviews yet — be the first to review Infineon SPU04N60C3.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)490pF

Technical details

650V 4.5A 50W Through Hole TO-251-3

Related FETs & Power MOSFETs