Infineon SPU02N60S5

Infineon · FETs & Power MOSFETs · MPN SPU02N60S5

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Specifications

Gate Charge(Qg)9.5nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)4.4pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)240pF

Technical details

600V 1.8A 4.5V 25W 2.7Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS

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