Infineon · FETs & Power MOSFETs · MPN SPPO4N80C3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
800V 4A 3.9V 63W 1.3Ω@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS