Infineon · FETs & Power MOSFETs · MPN SPP80N06S209
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| Gate Charge(Qg) | 80nC |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 810pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| RDS(on) | 9.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.14nF |
| Type | N-Channel |
55V 80A 4V 190W 9.1mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS