Infineon SPP20N65C3

Infineon · FETs & Power MOSFETs · MPN SPP20N65C3

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF

Technical details

N-Channel 650V 20.7A Through Hole TO-220

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