Infineon SPP20N60CFD

Infineon · FETs & Power MOSFETs · MPN SPP20N60CFD

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Specifications

Gate Charge(Qg)124nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)20.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
Type-

Technical details

N-Channel 600V 20.7A 208W Through Hole TO-220

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