Infineon · FETs & Power MOSFETs · MPN SPP20N60C3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 87nC@10V |
| Current - Continuous Drain(Id) | 20.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 190mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
600V 20.7A 208W Through Hole TO-220