Infineon SPP20N60C3

Infineon · FETs & Power MOSFETs · MPN SPP20N60C3

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)87nC@10V
Current - Continuous Drain(Id)20.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation208W
RDS(on)190mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)2.4nF

Technical details

600V 20.7A 208W Through Hole TO-220

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