Infineon · FETs & Power MOSFETs · MPN SPP11N80C3
No reviews yet — be the first to review Infineon SPP11N80C3.
| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
N-Channel 800V 11A 156W Through Hole TO-220-3