Infineon SPP11N65C3XK

Infineon · FETs & Power MOSFETs · MPN SPP11N65C3XK

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

650V 11A 3.9V 125W 380mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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