Infineon · FETs & Power MOSFETs · MPN SPP08N50C3
No reviews yet — be the first to review Infineon SPP08N50C3.
| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 560V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 750pF |
| Type | N-Channel |
560V 7.6A 3.9V 83W 600mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS