Infineon SPP07N65C3IN

Infineon · FETs & Power MOSFETs · MPN SPP07N65C3IN

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF
TypeN-Channel

Technical details

650V 7.3A 3.9V 83W 600mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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