Infineon · FETs & Power MOSFETs · MPN SPI21N50C3
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.65nF |
500V 21A 4V 250W 170mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS