Infineon · FETs & Power MOSFETs · MPN SPI15N65C3
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 540pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 156W |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
650V 15A 3.9V 156W 280mΩ@10V 1 N-channel N-Channel TO-262-3-1 Single FETs, MOSFETs RoHS