Infineon · FETs & Power MOSFETs · MPN SPI11N65C3XKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Output Capacitance(Coss) | 390pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
650V 11A 3.9V 125W 380mΩ@10V 1 N-channel TO-262-3-1 Single FETs, MOSFETs RoHS