Infineon · FETs & Power MOSFETs · MPN SPI08N50C3XK
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| Drain to Source Voltage | 560V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 7.6A |
| Output Capacitance(Coss) | 350pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 600mΩ@10V |
| Input Capacitance(Ciss) | 750pF |
560V 7.6A 3.9V 32W 600mΩ@10V TO-262-3 Single FETs, MOSFETs RoHS