Infineon SPI08N50C3XK

Infineon · FETs & Power MOSFETs · MPN SPI08N50C3XK

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Specifications

Drain to Source Voltage560V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)7.6A
Output Capacitance(Coss)350pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)600mΩ@10V
Input Capacitance(Ciss)750pF

Technical details

560V 7.6A 3.9V 32W 600mΩ@10V TO-262-3 Single FETs, MOSFETs RoHS

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